Title:
EL表示装置の作製方法
Document Type and Number:
Japanese Patent JP4463392
Kind Code:
B2
Abstract:
To provide an inexpensive EL display device of high definition. An anode, a light emitting layer, and a cathode are formed on a substrate, and selective doping using at least one selected from the group consisting of an alkali metal element, an alkaline earth metal element and a halogen element is then performed to form at least ones of electron transmitting regions and hole transmitting regions. In such a structure, only a part of the light emitting layer, where at least ones of the electron transmitting regions and the hole transmitting regions are formed, emits light when a given voltage is applied to the light emitting layer, whereby images are displayed as desired.
Inventors:
Shunpei Yamazaki
Tetsuo Tsutsui
Mayumi Mizukami
Tetsuo Tsutsui
Mayumi Mizukami
Application Number:
JP2000221836A
Publication Date:
May 19, 2010
Filing Date:
July 24, 2000
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H05B33/10; H01L51/50; H05B33/14; H05B33/22; H05B33/26; H01L27/32; H01L51/52; H01L51/56
Domestic Patent References:
| JP4132189A | ||||
| JP6291284A | ||||
| JP7138349A | ||||
| JP8222375A | ||||
| JP10050481A | ||||
| JP2000243562A | ||||
| JP2001035657A |