Title:
半導体発光素子の製造方法
Document Type and Number:
Japanese Patent JP4471694
Kind Code:
B2
Abstract:
A GaN-based light-emitting diode on a sapphire substrate has an active layer containing quantum dots, which is sandwiched between p and n-type zones. The p-type material is deposited on a AlGaN or AIN buffer before the active layer is deposited. This yields in high quality p-type material which need not be thermally activated, but can be thermally activated, however, before deposition of the active layer. This avoids the risk of destroying the quantum dot structure by the activation treatment.A group III nitride underlayer which contains at least Al, in which the dislocation density is ≤1 x 1011/cm2 and whose (002) plane X-ray rocking curve half-value width is ≤200 seconds is formed on set base material. Next, a p-type semiconductor layer group which is constituted by a group III nitride in which the Ga content relative to the total group III elements is ≥50 at% and in which the carrier density is ≥1 x 1016/cm3 is formed above the group III nitride underlayer. Next, a light-emitting layer which is contains plural mutually isolated insular crystals is formed on the p-type semiconductor layer group. Next, an n-type semiconductor layer group in which the Ga content relative to the total group III elements is ≥50 at% is formed on the light-emitting layer.
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Inventors:
Yuji Hori
Mitsuhiro Tanaka
Osamu Oda
Daddin Bruno
Monroy Eva
Mitsuhiro Tanaka
Osamu Oda
Daddin Bruno
Monroy Eva
Application Number:
JP2004094256A
Publication Date:
June 02, 2010
Filing Date:
March 29, 2004
Export Citation:
Assignee:
Nippon Insulator Co., Ltd.
Comisaria a Renergie Atomique
Comisaria a Renergie Atomique
International Classes:
C23C14/06; C23C16/34; H01L33/32; H01L21/205; H01L33/00; H01L33/06
Domestic Patent References:
| JP2002368267A | ||||
| JP2002261019A | ||||
| JP2002305325A |
Attorney, Agent or Firm:
Yoshitake Hidetoshi
Takahiro Arita
Takahiro Arita