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Title:
半導体装置の作製方法
Document Type and Number:
Japanese Patent JP4476390
Kind Code:
B2
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Inventors:
Shunpei Yamazaki
Hisashi Otani
Application Number:
JP23496399A
Publication Date:
June 09, 2010
Filing Date:
August 23, 1999
Export Citation:
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Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/336; H01L27/12; H01L21/02; H01L21/762; H01L29/786
Domestic Patent References:
JP10125879A
JP2260442A
JP5217994A
JP9162090A
JP4242958A
JP8255907A



 
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