Title:
有機半導体薄膜の製造方法
Document Type and Number:
Japanese Patent JP4481028
Kind Code:
B2
Abstract:
To provide an organic semiconductor exhibiting a high mobility and excellent in solubility toward a solvent, a method for producing the same, also an organic semiconductor thin film having the high mobility and an organic semiconductor element having an excellent electronic property.
This method for forming the semiconductor element is provided by forming a thin film of 2,3,9,10-tetramethylpentacene having 80 nm film thickness on a silicone substrate formed with a gold electrode pattern as a source/drain electrode to make a transistor structure.
COPYRIGHT: (C)2004,JPO&NCIPI
Inventors:
Narita Yoshinori
Nagata alone
Natsume Minoru
Nagata alone
Natsume Minoru
Application Number:
JP2004029701A
Publication Date:
June 16, 2010
Filing Date:
February 05, 2004
Export Citation:
Assignee:
ASAHI KASEI KABUSHIKI KAISHA
International Classes:
C07C15/20; H01L51/05; C07C1/22; C07C50/22; H01L29/786; H01L51/00; H01L51/30
Domestic Patent References:
| JP4219807B2 | ||||
| JP2005504811A | ||||
| JP2025488A | ||||
| JP60222483A | ||||
| JP2051537A |
Other References:
Acta Chemica Scandinavica,1958年,Vol.12, No.2,224-228
Attorney, Agent or Firm:
Tetsuya Mori
Yoshiaki Naito
Hide Tanaka Tetsu
Yoshiaki Naito
Hide Tanaka Tetsu