Title:
抵抗変化素子の駆動方法、初期処理方法、及び不揮発性記憶装置
Document Type and Number:
Japanese Patent JP4485605
Kind Code:
B2
Abstract:
A method of driving a variable resistance element includes: a writing step performed by applying a writing voltage pulse having a first polarity to a variable resistance layer to change a resistance state of the layer from high to low; and an erasing step performed by applying an erasing voltage pulse having a second polarity to the layer to change the state from low to high. Here, |Vw1|>|Vw2| where Vw1 represents a voltage value of the writing voltage pulse for first to N-th writing steps (N≧1) and Vw2 represents a voltage value of the writing voltage pulse for (N+1)-th and subsequent writing steps, and |Ve1|>|Ve2| where Ve1 represents a voltage value of the erasing voltage pulse for first to M-th erasing steps (M≧1) and Ve2 represents a voltage value of the erasing voltage pulse for (M+1)-th and subsequent erasing steps. The (N+1)-th writing step follows the M-th erasing step.
Inventors:
Shunsaku Muraoka
Tsuyoshi Takagi
Satoshi Mitani
Koji Katayama
Tsuyoshi Takagi
Satoshi Mitani
Koji Katayama
Application Number:
JP2009554808A
Publication Date:
June 23, 2010
Filing Date:
September 30, 2009
Export Citation:
Assignee:
Panasonic Corporation
International Classes:
G11C13/00
Domestic Patent References:
| JP2007004873A | 2007-01-11 | |||
| JP2007004849A | 2007-01-11 |
Foreign References:
| WO2008149484A1 | 2008-12-11 |
Attorney, Agent or Firm:
Hiromori Arai