Title:
不揮発性強誘電体メモリセルアレイブロック及び該メモリセルアレイブロックを利用する不揮発性強誘電体メモリ装置
Document Type and Number:
Japanese Patent JP4486836
Kind Code:
B2
Abstract:
The present invention discloses a cell array block of a ferroelectric random access memory (FeRAM) and an FeRAM using the same. In the multi-bit line structure cell array block of the FeRAM having a sub bit line and a main bit line, and including a plurality of sub cell arrays for inducing a sensing voltage of the main bit line by converting a sensing voltage of the sub bit line into current, in order to overcome different data properties of the whole sub cell arrays due to delay time differences by positions of the sub cell arrays, a different size of sensing loads are selectively transmitted to the main bit line according to the positions of the operated sub cell arrays, or a different size of ferroelectric capacitors are used in a memory cell according to the positions of the sub cell arrays. As a result, the cell data properties of the whole cell array block are equalized for even distribution.
Inventors:
Ginger Hui Fuku
Application Number:
JP2004078672A
Publication Date:
June 23, 2010
Filing Date:
March 18, 2004
Export Citation:
Assignee:
HYNIX SEMICONDUCTOR INC.
International Classes:
G11C11/22
Domestic Patent References:
| JP2003151265A | ||||
| JP2001160289A | ||||
| JP10289585A | ||||
| JP7021779A | ||||
| JP5274883A | ||||
| JP2003281881A |
Attorney, Agent or Firm:
Teruichi Hase
Maki Kamiya
Maki Kamiya