Title:
発熱体付きメモリ記憶デバイス
Document Type and Number:
Japanese Patent JP4493490
Kind Code:
B2
Abstract:
A memory storage device is provided that includes a storage cell having a changeable magnetic region. The changeable magnetic region includes a material having a magnetization state that is responsive to a change in temperature. The memory storage device also includes a heating element. The heating element is proximate to the storage cell for selectively changing the temperature of the changeable magnetic region of said storage cell. By heating the storage cell via the heating element, as opposed to heating the storage cell by directly applying current thereto, more flexibility is provided in the manufacture of the storage cells.
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Inventors:
Abraham, David, William
Troildo, Philip, Lewis
Troildo, Philip, Lewis
Application Number:
JP2004500299A
Publication Date:
June 30, 2010
Filing Date:
November 15, 2002
Export Citation:
Assignee:
INTERNATIONAL BUSINESS MASCHINES CORPORATION
International Classes:
G11C11/15; H01L21/8246; G11C7/04; G11C11/16; H01L27/105; H01L43/08
Domestic Patent References:
| JP2000285668A | ||||
| JP2000113666A | ||||
| JP2001196657A | ||||
| JP2003298025A | ||||
| JP4023293A | ||||
| JP2000307170A | ||||
| JP2001291911A | ||||
| JP2001257395A |
Attorney, Agent or Firm:
Hiroshi Sakaguchi
Yoshihiro City
Takeshi Ueno
Yoshihiro City
Takeshi Ueno