Title:
インジウム燐ガンダイオード及びその製造方法
Document Type and Number:
Japanese Patent JP4493772
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To realize the heat radiation of an indium phosphorus Gunn diode, the improvement of yield, and the simplification of the mounting of the Gunn diode on a plane circuit. SOLUTION: A recessed part 20 is formed at a semiconductor laminated part so that a part functioning as a Gunn diode and a low resistance layer part functioning as a path for applying a voltage from the outside part to a first contact layer 12 of the Gunn diode part can be separately constituted. Then, electrodes 15 and 16 for applying a voltage to the part functioning as the Gunn diode axe formed on the upper face of a second contact layer 14.
Inventors:
Atsushi Nakagawa
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Application Number:
JP36882099A
Publication Date:
June 30, 2010
Filing Date:
December 27, 1999
Export Citation:
Assignee:
New Japan Radio Co., Ltd.
International Classes:
H01L47/02
Domestic Patent References:
| JP11163440A | ||||
| JP10107338A | ||||
| JP2000022241A | ||||
| JP2000114823A | ||||
| JP2000353920A | ||||
| JP2001168749A |
Other References:
中川 敦、渡辺健一、出口忠義、小池誠二、木村親夫,AIN基板に実装した高性能V帯フリップチップガン発振器,電子情報通信学会技術研究報告MW98-174,電子情報通信学会,1999年 1月21日,Vol.98,No.521,p.91-97
Attorney, Agent or Firm:
Tsuneaki Nagao