Title:
半導体素子の製造方法
Document Type and Number:
Japanese Patent JP4496371
Kind Code:
B2
Inventors:
Takashi Ishigami
Michio Sato
Minoru Obata
Miyauchi
Kawai Mitsuo
Yamanobe Takashi
Maki Toshihiro
Noriaki Yagi
Shigeru Ando
Yoshiko Kohanawa
Michio Sato
Minoru Obata
Miyauchi
Kawai Mitsuo
Yamanobe Takashi
Maki Toshihiro
Noriaki Yagi
Shigeru Ando
Yoshiko Kohanawa
Application Number:
JP2005270372A
Publication Date:
July 07, 2010
Filing Date:
September 16, 2005
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L21/285; C22B9/22; C22B34/12; C22C14/00; C23C14/34; H01L21/28; C22C5/04; C22C19/03; C22C19/07; C22C27/02; C22C27/04
Domestic Patent References:
| JP5211326A | ||||
| JP11317379A | ||||
| JP2000306863A | ||||
| JP2005020020A | ||||
| JP60066425A |
Other References:
今井富士雄,高純度チタンの精製と利用,チタニウム・ジルコニウム,1990年10月,Vol.38, No.4,P.185-188
南條道夫他2名,レアメタルの精製錬(I) チタン(III),レアメタルの精製錬(I),1986年12月,第42巻第2号,P.277-298
H.J.Maier,PREPARATION OF DUCTILE Zr FROM ZrO2,Nuclear Instruments and Methods in Physics Research,1989年,A282,P.113-115
S.C.Liang,Impurities in refractory metals/silicides,J. Vac. Sci. Technol.,1984年,B2(4),P.714-717
堂山昌男,純金属の役割り,金属,1985年 9月,第55巻第9号,P.2-7
南條道夫他2名,レアメタルの精製錬(I) チタン(III),レアメタルの精製錬(I),1986年12月,第42巻第2号,P.277-298
H.J.Maier,PREPARATION OF DUCTILE Zr FROM ZrO2,Nuclear Instruments and Methods in Physics Research,1989年,A282,P.113-115
S.C.Liang,Impurities in refractory metals/silicides,J. Vac. Sci. Technol.,1984年,B2(4),P.714-717
堂山昌男,純金属の役割り,金属,1985年 9月,第55巻第9号,P.2-7
Attorney, Agent or Firm:
Hisashi Hatano
Shunguchi Sekiguchi
Shunguchi Sekiguchi