Title:
レーザ照射装置及び前記レーザ照射装置を用いた半導体装置の作製方法
Document Type and Number:
Japanese Patent JP4498716
Kind Code:
B2
Inventors:
Koichiro Tanaka
Application Number:
JP2003345276A
Publication Date:
July 07, 2010
Filing Date:
October 03, 2003
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/20; H01L21/268; H01L21/336; H01L29/786; H01S3/00
Domestic Patent References:
| JP62259437A | ||||
| JP2001326363A |