Title:
半導体レーザ素子およびその製造方法
Document Type and Number:
Japanese Patent JP4500516
Kind Code:
B2
Abstract:
The semiconductor laser device includes an active layer, a p-type cladding layer, and a p-type cap layer. The layers are sequentially stacked so that the semiconductor laser device is provided. The p-type cap layer includes both a p-type dopant and an n-type dopant. In another aspect, the p-type cap layer includes a first layer including a first p-type dopant and a second layer including a second p-type dopant having a diffusion coefficient smaller than that of the first p-type dopant. The first layer is far from the active layer, and the second layer is close to the active layer. In further aspect, the p-type cap layer includes carbon (C) as a p-type dopant. According to these configuration, the p-type dopant can be prevented from being diffused in the active layer and the p-type cladding layer.
Inventors:
Takemi Masayoshi
Kenichi Ono
Hanamaki Yoshihiko
Wataya Riki
Tetsuya Yagi
Harumi Nishiguchi
Sasaki Motoko
Shinji Abe
Yasuaki Yoshida
Kenichi Ono
Hanamaki Yoshihiko
Wataya Riki
Tetsuya Yagi
Harumi Nishiguchi
Sasaki Motoko
Shinji Abe
Yasuaki Yoshida
Application Number:
JP2003276127A
Publication Date:
July 14, 2010
Filing Date:
July 17, 2003
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L21/22; H01S5/323; H01L21/205; H01L27/15; H01S5/042; H01S5/22; H01S5/223; H01S5/343
Domestic Patent References:
| JP11068252A | ||||
| JP6085378A | ||||
| JP11307810A | ||||
| JP10256647A | ||||
| JP10135567A | ||||
| JP2000031580A | ||||
| JP6350200A |
Attorney, Agent or Firm:
Takuji Yamada
Mitsuo Tanaka
Mitsuo Wada
Masahiro Ishino
Kazuhisa Inaba
Mitsuo Tanaka
Mitsuo Wada
Masahiro Ishino
Kazuhisa Inaba