Title:
相分離の少ないIII族窒化物4元材料系を用いた半導体構造体および加工方法
Document Type and Number:
Japanese Patent JP4505147
Kind Code:
B2
Abstract:
A group III-nitride quaternary material system and method is disclosed for use in semiconductor structures, including laser diodes, transistors, and photodetectors, which reduces or eliminates phase separation and provides increased emission efficiency. In an exemplary embodiment the semiconductor structure includes a first InGaAlN layer of a first conduction type formed substantially without phase separation, an InGaAlN active layer substantially without phase separation, and a third InGaAlN layer of an opposite conduction type formed substantially without phase separation.
Inventors:
Toru Takayama
Takaaki Baba
James S Harris Jr.
Takaaki Baba
James S Harris Jr.
Application Number:
JP2000608483A
Publication Date:
July 21, 2010
Filing Date:
March 01, 2000
Export Citation:
Assignee:
Panasonic Corporation
International Classes:
H01S5/343; H01L29/201; H01L33/32; H01S5/323
Domestic Patent References:
| JP6152072A | ||||
| JP10229217A | ||||
| JP10065271A |
Foreign References:
| US5834331 |
Other References:
T.Matsuoka et al.,Phase Separation in wurtzite In1-x-yGaxAlyN,Internet Journal of Nitride Semiconductor Research,米国,The Materials Research Society ,1998年,Vol.3, No.54,p.1-5
Attorney, Agent or Firm:
Kosaku Sugimura