Title:
MFS型電界効果トランジスタ、強誘電体メモリならびに半導体装置
Document Type and Number:
Japanese Patent JP4506951
Kind Code:
B2
Abstract:
A MFS type field effect transistor includes a semiconductor layer, a PZT system ferroelectric layer formed on the semiconductor layer, a gate electrode formed on the PZT system ferroelectric layer, and an impurity layer composing a source or a drain, formed in the semiconductor layer. The PZT system ferroelectric layer includes Nb that replaces a Ti composition by 2.5 mol % or more but 40 mol % or less.
Inventors:
Ken Kijima
Application Number:
JP2004128692A
Publication Date:
July 21, 2010
Filing Date:
April 23, 2004
Export Citation:
Assignee:
Seiko Epson Corporation
International Classes:
H01L21/8246; H01L41/09; H01L21/28; H01L21/316; H01L21/336; H01L21/8247; H01L27/105; H01L27/1159; H01L29/51; H01L29/745; H01L29/76; H01L29/78; H01L29/788; H01L29/792; H01L29/94; H01L31/062; H01L31/113; H01L31/119; H01L41/187; H01L41/318; H01L41/39; H01L29/49
Domestic Patent References:
| JP8191134A | ||||
| JP2000509200A | ||||
| JP2003526880A | ||||
| JP2002151656A |
Foreign References:
| WO2003023858A1 |
Attorney, Agent or Firm:
Yukio Fuse
Mitsue Obuchi
Misa Nagata
Mitsue Obuchi
Misa Nagata