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Title:
薄膜形成方法及び薄膜形成装置
Document Type and Number:
Japanese Patent JP4509337
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method and an apparatus for forming a thin film, which form a thin film of superior film thickness uniformity on a large substrate and furthermore makes throughput high, and to provide a solar cell with a superior characteristic, and moreover, at a low cost. SOLUTION: The apparatus comprising a film forming chamber, inside of which several inductive coupling type electrode with shape of being folded over at the center and having a feeding part of high-frequency power and a grounding part at the each end of themselves, are arranged in parallel in the same plane, a high-frequency power source for supplying high-frequency power to the above feeding part, a means for controlling phase of the high-frequency power supplied to the above feeding part, and a waveform generator for modulating amplitude of the high-frequency power, is characterized by the configuration in which the high-frequency power has opposite phases opposite to each other at the adjacent feeding parts of the above several inductive coupling type electrodes, and in which the amplitude-modulated high-frequency power is supplied to the inductive coupling type electrodes and generates plasma, to form thin film on a substrate arranged so as to face the inductive coupling type electrodes.

Inventors:
Norikazu Ito
Watanabe Ka
Akihisa Matsuda
Michio Kondo
Application Number:
JP2000267554A
Publication Date:
July 21, 2010
Filing Date:
September 04, 2000
Export Citation:
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Assignee:
Ihi Co., Ltd.
National Institute of Advanced Industrial Science and Technology
Akihisa Matsuda
Michio Kondo
International Classes:
C23C16/505; H01L21/205; H01L31/04
Domestic Patent References:
JP9129555A
JP2000091236A
JP11243062A
JP10079372A
JP9007960A
JP8299785A
JP4236781A
JP7094421A
Foreign References:
WO2001088221A1
WO2001019144A1
Attorney, Agent or Firm:
Jiro Nakanishi



 
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