Title:
SRAMセル
Document Type and Number:
Japanese Patent JP4509485
Kind Code:
B2
Abstract:
The SRAM (Static Random Access) cell has a SOI (Silicon On Insulator) substrate which incorporates a base substrate. An etched insulating layer is formed with pits forming a semiconductor layer. A field forming part of the semiconductor layer (610) forms an active region. There is a connector of a first conductor type (602a) between a word conductor and a gate electrode. There is a source region (603) of a first conductor type in the active region and there are overlapping transistors (DT1,2) and (PT1,2). The circuit also includes a volume expansion region (600c).
Inventors:
Chung Take Kyo
Kim Young
Ginger ki
Kim Young
Ginger ki
Application Number:
JP2003067914A
Publication Date:
July 21, 2010
Filing Date:
March 13, 2003
Export Citation:
Assignee:
SAMSUNG ELECTRONICS CO.,LTD.
International Classes:
H01L21/8244; H01L21/84; H01L27/11; H01L27/12; H01L29/786
Domestic Patent References:
| JP2003179165A | ||||
| JP2003008021A |
Attorney, Agent or Firm:
Mikio Hatta
Atsushi Nogami
Yasuo Nara
Etsuko Saito
Katsuyuki Utani
Atsushi Nogami
Yasuo Nara
Etsuko Saito
Katsuyuki Utani