Title:
キャパシタの製造方法、構造体、及びキャパシタ
Document Type and Number:
Japanese Patent JP4510116
Kind Code:
B2
Abstract:
A method for manufacturing a capacitor, which includes: accelerating conductor particles (4) by ejecting the conductor particles together with gas, each of the conductor particles (4) covered with a dielectric (6); fixing the conductor particles to a substrate with the conductor particles still covered with the dielectric by colliding the conductor particles with the substrate (16); and sandwiching a deposited film (12) formed of the conductor particles fixed to the substrate between electrodes (14,16). In the gas deposition method fine particles are accelerated by gas to a velocity equal to or higher than sound velocity and collide violently with a substrate. Due to the impact during collision, the fine particles are fixed to the substrate and a thick film is formed.
Inventors:
Yoshihiko Imanaka
Application Number:
JP2008162503A
Publication Date:
July 21, 2010
Filing Date:
June 20, 2008
Export Citation:
Assignee:
富士通株式会社
International Classes:
H01G4/33
Domestic Patent References:
| JP2002043713A | ||||
| JP2008021895A | ||||
| JP2004342831A |
Attorney, Agent or Firm:
Hayashi Tsunetoku
Kenji Doi
Kenji Doi