窒化物系半導体発光素子およびその製造方法

Japanese Patent JP4510931

B2

A nitride-based semiconductor light-emitting device according to the present invention has a nitride-based semiconductor multilayer structure 50. The nitride-based semiconductor multilayer structure 50 includes: an active layer 32 including an AlaInbGacN crystal layer (where a+b+c=1, a≧0, b≧0 and c≧0); an AldGaeN overflow suppressing layer 36 (where d+e=1, d>0, and e≧0); and an AlfGagN layer 38 (where f+g=1, f≧0, g≧0 and f