Title:
窒化物半導体薄膜およびその製造方法
Document Type and Number:
Japanese Patent JP4535935
Kind Code:
B2
Inventors:
Tetsuya Akasaka
Toshiki Makimoto
Kazuhide Kumakura
Hironobu Masanobu
Yokoyama Haruki
Takashi Kobayashi
Toshiki Makimoto
Kazuhide Kumakura
Hironobu Masanobu
Yokoyama Haruki
Takashi Kobayashi
Application Number:
JP2005146974A
Publication Date:
September 01, 2010
Filing Date:
May 19, 2005
Export Citation:
Assignee:
Nippon Telegraph and Telephone Corporation
International Classes:
H01L21/205; H01L33/16; H01L33/22; H01L33/32
Domestic Patent References:
| JP2000188260A | ||||
| JP2141495A | ||||
| JP2001015496A |
Attorney, Agent or Firm:
Yoshikazu Tani
Atsuhiro Hamanaka
Atsuhiro Hamanaka