Title:
半導体検査方法及びそのシステム
Document Type and Number:
Japanese Patent JP4537730
Kind Code:
B2
Abstract:
To provide an inspection method that makes it possible to inspect continuity or the like of a circuit element in a semiconductor device from observation with a scanning charged particle microscope such as an electron microscope without troublesome work like random access operation of a probe, and providing a system that realizes the inspection method. A method for inspecting an electronic circuit of the invention uses a composite apparatus including an electron gun 2 , an ion beam gun 1 , and a secondary charged particle detector 4 to observe on a micro-scale contrast change on a sample surface in the case in which the surface of a sample semiconductor device is irradiated with an electron beam or a positively charged ion beam to charge the sample surface highly, and in the case in which a desired pattern in an area in the highly charged state is irradiated with a charged ion beam or an electron beam of opposite charge.
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Inventors:
Takashi Ogawa
Application Number:
JP2004050296A
Publication Date:
September 08, 2010
Filing Date:
February 25, 2004
Export Citation:
Assignee:
SII Nanotechnology Co., Ltd.
International Classes:
H01L21/66; G01N23/225; G01R31/02; G01R31/28; G01R31/307
Domestic Patent References:
| JP10294344A | ||||
| JP6082507A | ||||
| JP2003130922A |
Attorney, Agent or Firm:
Kentaro Kuhara
Noriaki Uchino
Nobuyuki Kimura
Noriaki Uchino
Nobuyuki Kimura