Title:
固体撮像素子およびその製造方法
Document Type and Number:
Japanese Patent JP4542660
Kind Code:
B2
Abstract:
A solid state image sensor device and a method of fabricating the same are disclosed in the present invention. A solid state image sensor device includes a semiconductor substrate, a well region in the semiconductor substrate, a horizontal charge transmission region in the well region, a plurality of insulating layers in the horizontal charge transmission region, a gate insulating layer on the entire surface including the insulating layers, a plurality of first polygates on the gate insulating layer, the first polygates being separated from each other and overlapping a portion of each insulating layer, a plurality of impurity regions in the horizontal charge transmission region at both sides of each first polygate, an interlayer insulating layer on the entire surface including the first polygates, and a plurality of second polygates on the interlayer insulating layer and overlapped with a portion of each first polygate.
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Inventors:
Choi good
Application Number:
JP2000069991A
Publication Date:
September 15, 2010
Filing Date:
March 14, 2000
Export Citation:
Assignee:
Crostec Capital, Limited Liability Company
International Classes:
H01L21/339; H01L27/148; H01L29/762; H01L29/768; H04N5/335; H04N5/369; H04N5/372
Domestic Patent References:
| JP2034940A | ||||
| JP4260370A | ||||
| JP5226378A |
Attorney, Agent or Firm:
Shoichi Okuyama
Arihara Koichi
Matsushima Tetsuo
Hidefumi Kawamura
Naomi Yoshida
Ayako Nakamura
Fukagawa Eri
Satoshi Morimoto
Arihara Koichi
Matsushima Tetsuo
Hidefumi Kawamura
Naomi Yoshida
Ayako Nakamura
Fukagawa Eri
Satoshi Morimoto