Title:
磁気メモリセルおよびその形成方法ならびに磁気メモリセルアレイおよびその製造方法
Document Type and Number:
Japanese Patent JP4563160
Kind Code:
B2
Abstract:
A method for forming MRAM cell structures wherein the topography of the cell is substantially flat and the distance between a bit line and a magnetic free layer, a word line and a magnetic free layer or a word line and a bit line and a magnetic free layer is precise and well controlled. The method includes the formation of an MTJ film stack over which is formed both a capping and sacrificial layer. The stack is patterned by conventional means, then is covered by a layer of insulation which is thinned by CMP to expose a remaining portion of the sacrificial layer. The remaining portion of the sacrificial layer can be precisely removed by an etching process, leaving only the well dimensioned capping layer to separate the bit line from the magnetic free layer and the capping layer. The bit line and an intervening layer of insulation separate the free layer from a word line in an equally precise and controlled manner.
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Inventors:
South Korea Sai
Six waves
Six waves
Application Number:
JP2004357286A
Publication Date:
October 13, 2010
Filing Date:
December 09, 2004
Export Citation:
Assignee:
Headway Technologies, Inc.
International Classes:
H01F10/32; H01L21/8246; G11C11/14; H01L27/105; H01L27/22; H01L29/82; H01L31/062; H01L43/08; H01L43/12
Domestic Patent References:
| JP2003086772A | ||||
| JP2003282837A |
Foreign References:
| US6744608 | ||||
| WO2004095515A1 |
Attorney, Agent or Firm:
Yasushi Santanzaki
Yoichiro Fujishima
Yoichiro Fujishima