Title:
エピタキシャルウエハ基板用に強化されたn型シリコン材料及びその製造方法
Document Type and Number:
Japanese Patent JP4567262
Kind Code:
B2
Abstract:
An enhanced n+ silicon material for epitaxial substrates and a method for producing it are described. The enhanced material leads to improved gettering characteristics of n/n+ epitaxial wafers based on these substrates. The method for preparing such n+ silicon material includes applying a co-doping of carbon to the usual n dopant in the silicon melt, before growing respective CZ crystals. This improves yield of enhanced n+ silicon material in crystal growing and ultimately leads to device yield stabilization or improvement when such n/n+ epitaxial wafers are applied in device manufacturing.
Inventors:
Kirshut Fritz Gee
Wilds Peterdi
Todd Volker Earl
Fukuto no Bro
Susnerev Boris A
Kim sun fly
Wilds Peterdi
Todd Volker Earl
Fukuto no Bro
Susnerev Boris A
Kim sun fly
Application Number:
JP2001511716A
Publication Date:
October 20, 2010
Filing Date:
July 12, 2000
Export Citation:
Assignee:
Samco Oregon Corporation
International Classes:
C30B29/06; C30B15/00; C30B15/04; H01L21/205; H01L21/322
Domestic Patent References:
| JP3164495A | ||||
| JP3183685A |
Other References:
Scott A. MCHUGO et al.,A study of gettering efficiency and stability in Czochralski silicon,Applied Physics Letters,1995年 5月22日,Vol. 66, No. 21,p. 2840-2842
Attorney, Agent or Firm:
Minoru Nakamura
Fumiaki Otsuka
Sadao Kumakura
Shishido Kaichi
Hideto Takeuchi
Toshio Imajo
Nobuo Ogawa
Village shrine Atsuo
Takaki Nishijima
Atsushi Hakoda
Fumiaki Otsuka
Sadao Kumakura
Shishido Kaichi
Hideto Takeuchi
Toshio Imajo
Nobuo Ogawa
Village shrine Atsuo
Takaki Nishijima
Atsushi Hakoda