Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP4567587
Kind Code:
B2
Abstract:
(a) A recess is formed through an insulating film formed over a semiconductor substrate. (b) After the recess is formed, a temperature of the substrate is raised to 300° C. or higher at a temperature rising rate of 10° C./s or slower and a first degassing process is executed. (c) After the first degassing process, a conductive film is deposited on the insulating film, the conductive film being embedded in the recess. (d) The deposited conductive film is polished until the insulating film is exposed. It is possible to suppress occurrence of defects during CMP to be performed after a conductive member is deposited on the surface of the insulating film having a recess formed therethrough.
Inventors:
Go Kamiyoshi
Nobuyuki Otsuka
Hisaya Sakai
Norika Shimizu
Nobuyuki Otsuka
Hisaya Sakai
Norika Shimizu
Application Number:
JP2005357198A
Publication Date:
October 20, 2010
Filing Date:
December 12, 2005
Export Citation:
Assignee:
富士通株式会社
International Classes:
H01L21/768
Domestic Patent References:
| JP2000040700A | ||||
| JP10242274A | ||||
| JP2004096080A | ||||
| JP2004095728A | ||||
| JP2000164712A |
Attorney, Agent or Firm:
Keishiro Takahashi
Mikio Kuruyama
Mikio Kuruyama