To solve the problem that, when a die bonding film is fused and adhered to a semiconductor wafer held by a semiconductor wafer-protecting sheet after polishing the semiconductor wafer to be ultrathin, the semiconductor wafer is broken caused by softening of the semiconductor-protecting sheet by fusing heat and, when a hard support is adopted to protect the semiconductor wafer from breaking, the semiconductor wafer is broken caused by no reduction in stress during polishing.
This protecting sheet for semiconductor wafer comprises a support 1 comprising a single layer or multiple layers and an adhesive layer 2 laminated on the support 1. The support 1 has at least one heat resistant layer having 160-300°C melting point and 0.1-1.5 GPa tensile elastic modulus.
COPYRIGHT: (C)2003,JPO
Hiroyuki Uchida
Tomomichi Takatsu
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