Title:
半導体光検出器の作製方法
Document Type and Number:
Japanese Patent JP4574833
Kind Code:
B2
Abstract:
Multilayer films ( 2 to 7 ) containing a light absorption layer ( 4 ) are formed on a GaAs substrate. After laminating the GaAs substrate ( 1 ) and a glass substrate ( 8 ) so that an uppermost surface film ( 7 ) of the multilayer film and the glass substrate ( 8 ) may come into contact with each other, by pressurizing between the GaAs substrate ( 1 ) and the glass substrate ( 8 ) and heating them together, both substrates ( 1 ) and ( 8 ) are fusion-bonded. Next, the GaAs substrate ( 1 ) and the buffer layer ( 2 ) are first removed, and then the etch stop layer ( 3 ) is removed. Then, while coming into contact with the light absorption layer ( 4 ), comb-type Schottky electrodes ( 10 ) and ( 11 ), which are mutually apart, are formed.
Inventors:
Minoru Arakaki
Kazutoshi Nakajima
Kazutoshi Nakajima
Application Number:
JP2000343940A
Publication Date:
November 04, 2010
Filing Date:
November 10, 2000
Export Citation:
Assignee:
Hamamatsu Photonics Co., Ltd.
International Classes:
H01L29/872; H01L31/108; H01L29/47; H01L31/0203; H01L31/18
Domestic Patent References:
| JP58200525A | ||||
| JP9330940A | ||||
| JP6151946A | ||||
| JP3270073A | ||||
| JP10270670A |
Foreign References:
| US4226649 | ||||
| US5330918 | ||||
| EP0063422A1 | ||||
| US4601779 | ||||
| US5525828 |
Other References:
O.Vendier et al.,"Thin-Film Inverted MSM Photodetectors",IEEE Photonics Technology Letters,Vol.8, No.2, February 1996,p.266-268
Attorney, Agent or Firm:
Yoshiki Hasegawa
Tatsuya Shioda
Shiro Terasaki
Masatoshi Shibata
Tatsuya Shioda
Shiro Terasaki
Masatoshi Shibata