Title:
薄膜トランジスタ基板及びその製造方法
Document Type and Number:
Japanese Patent JP4578402
Kind Code:
B2
Abstract:
A thin film transistor substrate and method of fabrication is presented. The thin film transistor includes gate and data lines forming a pixel area and separated by a gate insulating layer on a LCD substrate. A thin film transistor in the pixel area has a semiconductor pattern which forms a channel. A pixel electrode in the pixel area contains a transparent conductive film. A gate metal film is adjacent to a portion of transparent conductive film in the pixel area. A semiconductor passivation film is formed by exposing the semiconductor in the channel to an oxygen or nitrogen plasma. A gate pad connected with the gate line contains the transparent film in a pad section and the transparent film and the gate film in a connection area connecting the gate pad and the gate line. A data pad connected with the data line contains the transparent film.
Inventors:
Taeyeon Jun
Application Number:
JP2005376179A
Publication Date:
November 10, 2010
Filing Date:
December 27, 2005
Export Citation:
Assignee:
LG Display Company Limited
International Classes:
H01L21/336; G02F1/1368; G09F9/30; H01L29/786
Domestic Patent References:
| JP2002176062A | ||||
| JP2019840A | ||||
| JP2237161A | ||||
| JP3116778A | ||||
| JP1120070A |
Attorney, Agent or Firm:
Michiharu Soga
Hidetoshi Furukawa
Suzuki Kenchi
Kajinami order
Shunichi Ueda
Hidetoshi Furukawa
Suzuki Kenchi
Kajinami order
Shunichi Ueda