Title:
半導体装置
Document Type and Number:
Japanese Patent JP4583588
Kind Code:
B2
Abstract:
A semiconductor device of one chip has a first power supply terminal allowing connection with an external power supply IC, a second power supply terminal allowing connection with the external power supply IC, a main voltage dropping circuit connected with the first power supply terminal, a secondary voltage dropping circuit connected with the second power supply terminal, and an internal circuit connected with the main voltage dropping circuit and the secondary voltage dropping circuit. A high voltage of the external power supply IC is received in the main voltage dropping circuit through the first power supply terminal and is dropped. The high or low voltage of the external power supply IC is received in the secondary voltage dropping circuit through the second power supply terminal and is dropped. The internal circuit is operated by using the dropped voltage obtained in the main or secondary voltage dropping circuit.
Inventors:
Mitsuru Sugita
Hiroshi Hashimoto
Hiroshi Hashimoto
Application Number:
JP2000373966A
Publication Date:
November 17, 2010
Filing Date:
December 08, 2000
Export Citation:
Assignee:
Renesas Electronics Corporation
International Classes:
G05F1/00; H01L21/822; G11C5/14; H01L27/04; H02J1/00
Domestic Patent References:
| JP11119844A | ||||
| JP10214938A | ||||
| JP6149395A |
Attorney, Agent or Firm:
Kuro Fukami
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai
Nobuo Arakawa
Masato Sasaki
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai
Nobuo Arakawa
Masato Sasaki