Title:
放射線検出器
Document Type and Number:
Japanese Patent JP4586939
Kind Code:
B2
Abstract:
A radiation detector of this invention has an insulating, non-amine barrier layer disposed between exposed surfaces of a radiation sensitive semiconductor layer, a carrier selective high resistance film and a common electrode, and a curable synthetic resin film. This barrier layer can further inhibit a chemical reaction between the semiconductor layer and curable synthetic resin film, and can prevent an increase in dark current which flows through the semiconductor layer. Since no chemical reaction occurs between the barrier layer and semiconductor layer, the semiconductor layer will never be degraded. Further, with an auxiliary plate disposed on an upper surface of the curable synthetic resin film, it is possible to manufacture a radiation detector free from warpage and cracking due to temperature change.
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Inventors:
Kenji Sato
Application Number:
JP2010507152A
Publication Date:
November 24, 2010
Filing Date:
April 07, 2009
Export Citation:
Assignee:
SHIMADZU CORPORATION
International Classes:
H01L27/14; G01T1/24; H01L27/146
Domestic Patent References:
| JP2007147596A | 2007-06-14 |
Foreign References:
| WO2006046384A1 | 2006-05-04 |
Attorney, Agent or Firm:
Tsutomu Sugiya
Hiroyuki Todaka
Hiroyuki Todaka