Title:
分子線エピタキシャル成長装置およびそれを用いたシリコン基板上へのIII族窒化物単結晶膜の製造方法
Document Type and Number:
Japanese Patent JP4590225
Kind Code:
B2
Inventors:
Tadashi Ohachi
Wada Gen
Wada Gen
Application Number:
JP2004224039A
Publication Date:
December 01, 2010
Filing Date:
July 30, 2004
Export Citation:
Assignee:
School corporation Doshisha
International Classes:
C23C14/48; C30B23/08; C30B29/38; H01L21/205
Domestic Patent References:
| JP7291790A | ||||
| JP7014765A | ||||
| JP11274079A |
Attorney, Agent or Firm:
Katsunori Sugimoto