半導体装置の製造方法 - Toshiba Corporation

Title:

半導体装置の製造方法

Document Type and Number:

Japanese Patent JP4592649

Kind Code:

B2

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Inventors:

Atsushi Yagishita
Koji Matsuo

Application Number:

JP2006175509A

Publication Date:

December 01, 2010

Filing Date:

June 26, 2006

Export Citation:

Assignee:

Toshiba Corporation

International Classes:

H01L21/8238; H01L21/28; H01L27/092; H01L29/417; H01L29/786

Domestic Patent References:

Attorney, Agent or Firm:

Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Sadao Muramatsu
Ryo Hashimoto

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