Title:
電気抵抗が高い相変化記録膜
Document Type and Number:
Japanese Patent JP4606721
Kind Code:
B2
Abstract:
To provide a phase change recording film high in electric resistance and a sputtering target for forming the film.
The phase change recording film is high in electric resistance and contains 15-30% of Ge, 15-30% of Sb, and 0.2-8% of C, in terms of atomic percentage, with the rest comprising Te and inevitable impurities. A sputtering target for forming the film is also given.
COPYRIGHT: (C)2005,JPO&NCIPI
Inventors:
River dragon lake
Park Seong-hee
Horii Hideki
Sohei Nonaka
Kei Kinoshita
Akatsuki Mori
Park Seong-hee
Horii Hideki
Sohei Nonaka
Kei Kinoshita
Akatsuki Mori
Application Number:
JP2003345361A
Publication Date:
January 05, 2011
Filing Date:
October 03, 2003
Export Citation:
Assignee:
Mitsubishi Materials Corporation
International Classes:
C23C14/34; H01L27/10; H01L27/105; H01L45/00
Domestic Patent References:
| JP4113887A | ||||
| JP3238882A |
Other References:
中山和也、福島早奈恵,相変化型不揮発性メモリーの現状と可能性,応用物理,日本,2002年12月,第71巻、第12号,第1513-1517頁
Attorney, Agent or Firm:
Kazuo Tomita