Title:
光電変換素子の製造方法
Document Type and Number:
Japanese Patent JP4611447
Kind Code:
B1
Abstract:
A method of producing a photoelectric conversion device (1) having a multilayer structure formed on a substrate, the multilayer structure including a lower electrode (20), a photoelectric conversion layer (30) made of a compound semiconductor layer, an n-type buffer layer (40) made of a compound semiconductor layer, and a transparent conductive layer (60), is disclosed. A reaction solution, which is an aqueous solution containing an n-type dopant element, at least one of ammonia and an ammonium salt, and thiourea, is prepared, the n-type dopant is diffused into the photoelectric conversion layer (30) by immersing the substrate (10) including the photoelectric conversion layer (30) in the reaction solution (90) controlled to a temperature in the range from 20°C to 45°C; and the buffer layer (40) is deposited on the photoelectric conversion layer (30) by immersing the substrate (10) including the photoelectric conversion layer (30) subjected to the diffusion step in the reaction solution (90) controlled to a temperature in the range from 70°C to 95°C.
Inventors:
Tetsuo Kono
Koike
Koike
Application Number:
JP2010017657A
Publication Date:
January 12, 2011
Filing Date:
January 29, 2010
Export Citation:
Assignee:
FUJIFILM Corporation
International Classes:
H01L31/04
Domestic Patent References:
| JP4320529B2 |
Other References:
T.Nakada,Direct Evidence of Cd Diffusion into CIGS Thin Films during Chemical-Bath Deposition Process of CdS Films,APPLIED PHYSICS LETTERS,米国,1999年,vol.74, No.17,2444-2446
Attorney, Agent or Firm:
Yanagita Seiji
Go Sakuma
Go Sakuma