Title:
窒化物半導体基板の製造方法
Document Type and Number:
Japanese Patent JP4633962
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a substrate made of a nitride semiconductor good in crystallinity. SOLUTION: The substrate is produced by providing a first wafer obtained by growing the nitride semiconductor on a first substrate and a second wafer obtained by growing the nitride semiconductor on a second substrate, then adhering the first wafer and the second wafer so that the nitride semiconductor are closely adhered to each other and removing the first substrate and the second substrate.
Inventors:
Masayuki Senoo
Shuji Nakamura
Shuji Nakamura
Application Number:
JP2001149892A
Publication Date:
February 16, 2011
Filing Date:
May 18, 2001
Export Citation:
Assignee:
Nichia Corporation
International Classes:
C30B29/38; H01L21/02; H01L21/205; H01L33/12; H01L33/32; H01S5/323
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