Title:
半導体装置の製造方法および半導体装置
Document Type and Number:
Japanese Patent JP4646367
Kind Code:
B2
Abstract:
A shielding film is formed on the surface of a substrate and a pair of aperture patterns for light transmission with substantially the same line width are formed in the above shielding film so as to run parallel to each other with a gap and to be isolated from other aperture patterns for light transmission. The exposure amount (exposure energy to sufficiently large aperture pattern) at the time a photoresist is exposed by using this photo mask is 4 or more times and 20 or less times as large as the exposure amount on the border where the photoresist is converted from soluble to insoluble through the exposure or the exposure amount on the border from insoluble to soluble. Thereby, it becomes possible to form a microscopic pattern without using an auxiliary pattern method or a phase shift mask and the default inspection of a mask can be made easy.
Inventors:
Shuji Nakao
Application Number:
JP2000255681A
Publication Date:
March 09, 2011
Filing Date:
August 25, 2000
Export Citation:
Assignee:
Renesas Electronics Corporation
International Classes:
H01L21/027; G03F1/00; G03F1/32; G03F1/36; G03F1/68; G03F1/70; G03F7/20
Domestic Patent References:
| JP5217842A | ||||
| JP6151269A | ||||
| JP11015133A | ||||
| JP2000150340A | ||||
| JP11109603A | ||||
| JP11251536A | ||||
| JP11212247A | ||||
| JP59009922A |
Attorney, Agent or Firm:
Fukami patent office