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Title:
イオン注入における設備の動作可能時間を延長するための方法および装置
Document Type and Number:
Japanese Patent JP4646920
Kind Code:
B2
Abstract:
The service lifetime of an ion source is enhanced or prolonged by the source having provisions for in-situ etch cleaning of the ion source and of an extraction electrode, using reactive halogen gases (F or Cl), and by having features that extend the service duration between cleanings. The latter include accurate vapor flow control, accurate focusing of the ion beam optics, and thermal control of the extraction electrode that prevents formation of deposits or prevents electrode destruction. An apparatus comprised of an ion source for generating dopant ions for semiconductor wafer processing is coupled to a remote plasma source which delivers F or Cl ions to the first ion source for the purpose of cleaning deposits in the first ion source and the extraction electrode. These methods and apparatus enable long equipment uptime when running condensable feed gases such as sublimated vapor sources, and are particularly applicable for use with so-called cold ion sources. Methods and apparatus are described which enable long equipment uptime when decaborane and octadecarborane are used as feed materials, as well as when vaporized elemental arsenic and phosphorus are used, and which serve to enhance beam stability during ion implantation.

Inventors:
Horse Key, Thomas N.
Millgate, Robert W. The Third
Sacco, George P. Jr.
Jacobson, Dale Conrad
Rule, wade allen
Application Number:
JP2006544049A
Publication Date:
March 09, 2011
Filing Date:
December 09, 2004
Export Citation:
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Assignee:
Semequip, Incorporated
International Classes:
H01J27/02; H01J7/24; H01J37/08; H01J37/317; H01L21/265; H01J
Domestic Patent References:
JP11329336A
JP11329266A
JP10106478A
JP63126225A
JP2000030620A
JP2000340165A
Attorney, Agent or Firm:
Hidesaku Yamamoto
Takaaki Yasumura
Natsuki Morishita