Title:
直接ウェハ結合による低欠陥のゲルマニウム膜の製造
Document Type and Number:
Japanese Patent JP4651099
Kind Code:
B2
Abstract:
A method of fabricating a low defect germanium thin film includes preparing a silicon wafer for germanium deposition; forming a germanium film using a two-step CVD process, annealing the germanium thin film using a multiple cycle process; implanting hydrogen ions; depositing and smoothing a layer of tetraethylorthosilicate oxide (TEOS); preparing a counter wafer; bonding the germanium thin film to a counter wafer to form a bonded structure; annealing the bonded structure at a temperature of at least 375° C. to facilitate splitting of the bonded wafer; splitting the bonded structure to expose the germanium thin film; removing any remaining silicon from the germanium thin film surface along with a portion of the germanium thin film defect zone; and incorporating the low-defect germanium thin film into the desired end-product device.
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Inventors:
Ma Jae-Shen
Lee John-Jean
Douglas Jay. Tweet
Su Shen Teng
Lee John-Jean
Douglas Jay. Tweet
Su Shen Teng
Application Number:
JP2005293067A
Publication Date:
March 16, 2011
Filing Date:
October 05, 2005
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01L21/205; C23C16/52
Domestic Patent References:
| JP4027116A | ||||
| JP2003178975A | ||||
| JP11121377A | ||||
| JP2003249641A | ||||
| JP2002525255A |
Foreign References:
| WO2004053961A1 | ||||
| WO2004084268A1 | ||||
| WO2006012544A1 |
Attorney, Agent or Firm:
Hidesaku Yamamoto
Takaaki Yasumura
Takeshi Oshio
Takaaki Yasumura
Takeshi Oshio