Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP4666308
Kind Code:
B2
Abstract:
A semiconductor device manufacture method has the steps of: (a) coating a low dielectric constant low-level insulating film above a semiconductor substrate formed with a plurality of semiconductor elements; (b) processing the low-level insulating film to increase a mechanical strength of the low-level insulating film; (c) coating a low dielectric constant high-level insulating film above the low-level insulating film; and (d) forming a buried wiring including a wiring pattern in the high-level insulating film and a via conductor in the low-level insulating film. The low-level insulating film and high-level insulating film are made from the same material. The process of increasing the mechanical strength includes an ultraviolet ray irradiation process or a hydrogen plasma applying process.
Inventors:
Yoshiyuki Okura
Application Number:
JP2006048131A
Publication Date:
April 06, 2011
Filing Date:
February 24, 2006
Export Citation:
Assignee:
Fujitsu Semiconductor Limited
International Classes:
H01L21/768; H01L21/316; H01L23/522
Domestic Patent References:
| JP2005317835A | ||||
| JP2004260076A | ||||
| JP2000216153A | ||||
| JP2005203794A |
Attorney, Agent or Firm:
Keishiro Takahashi