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Title:
半導体ウエハ加工用保護シート及び半導体ウエハの裏面研削方法
Document Type and Number:
Japanese Patent JP4666565
Kind Code:
B2
Abstract:

To provide a protective sheet for working a semiconductor wafer capable of inhibiting warpage of the semiconductor wafer at a small value, even when the large-sized wafer is thinned by a back-grinding process, a rear-surface treating process or the like.

In the protective sheet for working the semiconductor wafer used for protecting the surface of the semiconductor wafer formed in a pattern, when the rear of the wafer is ground, a pressure-sensitive adhesive layer is laminated on at least one surface on a base material, and the base material is composed of one layer or multilayers. In the protective sheet, at least one layer of the base material has a tensile modulus of elasticity of 0.6 GPa or higher at 23°C, and the outermost layer of the base material on the side reverse to the pressure-sensitive adhesive layer brought into contact with the surface of the semiconductor wafer has a coefficient of a water absorption of 0.3% or lower.

COPYRIGHT: (C)2005,JPO&NCIPI


Inventors:
Koji Akazawa
Application Number:
JP2003346498A
Publication Date:
April 06, 2011
Filing Date:
October 06, 2003
Export Citation:
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Assignee:
NITTO DENKO CORPORATION
International Classes:
C09J7/02; H01L21/304; C09J201/00
Domestic Patent References:
JP2001203255A
JP2003115469A
JP2001200222A
JP2000212524A
JP5235150A
JP2003151930A
JP2000129227A
JP2004006630A
Foreign References:
WO2004090962A1
Attorney, Agent or Firm:
Patent Business Corporation Unias International Patent Office
Koichi Kajisaki
Yuzo Ozaki
Toshihiko Taniguchi