Title:
プログラミング速度を向上させるプログラミング電圧に応じたプログラム時間調整
Document Type and Number:
Japanese Patent JP4669065
Kind Code:
B2
Abstract:
In a non-volatile memory system, the programming time period allocated for the program pulse is adjusted as a function of the voltage level of the pump pulse required so that the total number of iterative pump pulses required to program the charge storage element to the required threshold voltage is reduced. For example, programming time period may be increased with an increase in the voltage level of the pump pulse required. This allows the programming time period of the program pulse to be increased to a value that compensates for the increased charge-up time that is required for the higher amplitude program pulses to reach the desired programming voltage.
Inventors:
Lee, Si-Chun
Miwa Tatsu
Miwa Tatsu
Application Number:
JP2009503138A
Publication Date:
April 13, 2011
Filing Date:
March 15, 2007
Export Citation:
Assignee:
SanDisk Corporation
International Classes:
G11C16/02; G11C16/06
Domestic Patent References:
| JP2004022112A | ||||
| JP2007115359A |
Foreign References:
| WO2006019740A1 |
Attorney, Agent or Firm:
Toshi Inoguchi