Title:
半導体装置用WSi膜、半導体装置、半導体装置用WSi膜の製造方法、及び半導体装置の製造方法
Document Type and Number:
Japanese Patent JP4669108
Kind Code:
B2
Abstract:
Tungsten silicide WSix is grown through reduction of WF6 with SiCl2H2, and the flow rate between WF6 and SiCl2H2 is controlled in such a manner that the composition ratio x ranges from 2.0 to 2.2 in an initial stage for forming cores on a doped polysilicon layer, and is treated with heat at 700 degrees to 850 degrees in centigrade so as to grow tungsten silicide grains with <001> orientation faster than tungsten silicide grains with <101> orientation; the tungsten silicide WSix is tightly adhered to the doped polysilicon, and the abnormal oxidation is restricted during the heat treatment.
Inventors:
Liu Shiyuan
Application Number:
JP2000204351A
Publication Date:
April 13, 2011
Filing Date:
June 02, 2000
Export Citation:
Assignee:
Renesas Electronics Corporation
International Classes:
H01L21/28; H01L21/285; C23C16/42; C23C16/56; H01L21/3205; H01L21/768; H01L23/52; H01L29/78
Domestic Patent References:
| JP2000091556A | ||||
| JP2000150416A | ||||
| JP9246206A |
Attorney, Agent or Firm:
Shinji Hayami
Kana Nomoto
Satoshi Amagi
Kana Nomoto
Satoshi Amagi