Title:
シリコンウェーハの製造方法
Document Type and Number:
Japanese Patent JP4685231
Kind Code:
B2
Abstract:
Silicon wafer has an oxygen precipitation concentration profile between an upper surface and a base. The profile has a first and a second peak in a first and a second predetermined depth of the upper surface and the base surface of the wafer; a zone (DZ) between the upper surface of the wafer and the first peak and between the base surface of the wafer and the second peak; and a concave zone between the two peaks. Independent claims are also included for: (1) a process for the production of the wafer; and (2) a Czochralski pulling apparatus for growing a single crystalline silicon blank. Preferred Features: The oxygen precipitation concentration profile is symmetrical to the central surface of the wafer which lies centrally to the upper surface and the base surface. The depth of the zone (DZ) is 10-40 mu m from the upper surface and the base surface of the silicon wafer.
Inventors:
Park
Application Number:
JP2000344053A
Publication Date:
May 18, 2011
Filing Date:
November 10, 2000
Export Citation:
Assignee:
Samsung Electronics Co.,Ltd.
International Classes:
C30B29/06; H01L21/322; C30B15/00; C30B15/14; C30B33/02; H01L21/208; H01L21/26
Domestic Patent References:
| JP1242500A | ||||
| JP6504878A | ||||
| JP11092283A | ||||
| JP2002110685A | ||||
| JP2002543608A |
Attorney, Agent or Firm:
Masatake Shiga
Takashi Watanabe
Yasuhiko Murayama
Shinya Mitsuhiro
Takashi Watanabe
Yasuhiko Murayama
Shinya Mitsuhiro