Title:
マスク、電子ビームの偏向量の校正方法、電子ビーム露光装置
Document Type and Number:
Japanese Patent JP4690586
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To calculate calibration function for adjusting the deflecting amount of deflection parts. SOLUTION: This electron beam exposure system exposes a prescribed electronic circuit pattern on a wafer by irradiation of an electron beam. Further, the system is provided with a mask stage 72 for mounting a mask 30 which is provided with a pattern block used for generating the electron beam having the same shape as the prescribed electronic circuit pattern, a block for adjustment which is used for adjusting the deflecting amount of deflection parts for deflecting the electron beam, and an introduction block which is used for detecting the block for adjustment; the deflection parts (18, 22 and 26) for deflecting the electron beam; a calibration function calculator 200 for calculating a calibration function which is used for adjusting the deflection parts, in such a manner that the deflection parts deflect the electron beam to an arbitrary block of a mask when the mask is mounted on the mask stage; and electron lenses (50, 52 and 66) which focus an image on a wafer by using the electron beam.
Inventors:
Maki Takakuwa
Application Number:
JP2001173967A
Publication Date:
June 01, 2011
Filing Date:
June 08, 2001
Export Citation:
Assignee:
Advantest Corporation
International Classes:
H01L21/027; G03F1/20; G03F1/70; H01J37/147; H01J37/305
Domestic Patent References:
| JP11111592A | ||||
| JP2001203157A | ||||
| JP2001007001A |
Attorney, Agent or Firm:
Akihiro Ryuka