Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP4694769
Kind Code:
B2
Abstract:
A manufacturing method of a semiconductor device having a trench is provided to form, at a corner portion of the trench, an oxide film which is greater in thickness and smaller in stress than at other portions. When the trench formed in the semiconductor substrate is oxidized, it is oxidized in an oxygen environment containing dichloroethylene at a predetermined weight percent to allow the formation of an oxide film having a greater thickness at the corner portion of the trench than thickness at other portions, whereby the semiconductor device improving dielectric breakdown characteristics can be obtained.
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Inventors:
Tadashi Kubota
Yoshihiro Kitamura
Takuo Ohashi
Sakurai Susumu
Takayuki Kanda
Shinichi Horibe
Yoshihiro Kitamura
Takuo Ohashi
Sakurai Susumu
Takayuki Kanda
Shinichi Horibe
Application Number:
JP2003016968A
Publication Date:
June 08, 2011
Filing Date:
January 27, 2003
Export Citation:
Assignee:
Elpida Memory Co., Ltd.
International Classes:
H01L21/316; H01L21/76; H01L21/762
Domestic Patent References:
| JP2000208500A | ||||
| JP6267938A |
Foreign References:
| WO2001047010A2 |
Attorney, Agent or Firm:
Kenho Ikeda
Shuichi Fukuda
Takashi Sasaki
Shuichi Fukuda
Takashi Sasaki