Title:
プラズマを径方向に均一に分布する容量結合プラズマリアクタ
Document Type and Number:
Japanese Patent JP4698222
Kind Code:
B2
Abstract:
A plasma reactor for processing a semiconductor wafer includes a side wall and an overhead ceiling defining a chamber, a workpiece support cathode within the chamber having a working surface facing the ceiling for supporting a semiconductor workpiece, process gas inlets for introducing a process gas into the chamber and an RF bias power generator having a bias power frequency. There is a bias power feed point at the working surface and an RF conductor is connected between the RF bias power generator and the bias power feed point at the working surface. A dielectric sleeve surrounds a portion of the RF conductor, the sleeve having an axial length along the RF conductor, a dielectric constant and an axial location along the RF conductor, the length, dielectric constant and location of the sleeve being such that the sleeve provides a reactance that enhances plasma ion density uniformity over the working surface. In accordance with a further aspect, the reactor can include an annular RF coupling ring having an inner diameter corresponding generally to a periphery of the workpiece, the RF coupling ring extending a sufficient portion of a distance between the working surface and the overhead electrode to enhance plasma ion density near a periphery of the workpiece.
Inventors:
Yang, Jean, Gyo
Hoffman, Daniel, Jay.
Carducci, James, Dee.
Backburger, Douglas, A., Junior
Hagan, Robert, Bee.
Miller, Matthew, Elle.
Chan, Kang Lee
Del Gadino, Gerrard, A.
Hoffman, Daniel, Jay.
Carducci, James, Dee.
Backburger, Douglas, A., Junior
Hagan, Robert, Bee.
Miller, Matthew, Elle.
Chan, Kang Lee
Del Gadino, Gerrard, A.
Application Number:
JP2004534479A
Publication Date:
June 08, 2011
Filing Date:
September 03, 2003
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
H01L21/3065; H01J37/32; H05H1/46
Domestic Patent References:
| JP2001319920A | ||||
| JP2001185542A | ||||
| JP2003514389A | ||||
| JP4247878A | ||||
| JP4000901A | ||||
| JP2002100622A | ||||
| JP1218106A | ||||
| JP2002203840A |
Foreign References:
| WO2001037315A1 | ||||
| WO2001071765A1 |
Attorney, Agent or Firm:
Yoshiaki Anzai