To provide a manufacturing method for a field effect organic transistor having high mobility and small threshold variation.

This manufacturing method for the field effect organic transistor comprises the steps of forming a source electrode 2, a drain electrode 3, and an organic semiconductor layer 4 on a first substrate 1; peeling off the first substrate 1 from the organic semiconductor layer 4 after forming a second substrate 5 on the organic semiconductor layer 4; and forming a gate insulating layer 6 and a gate electrode 7 on the peel surface of the organic semiconductor layer 4.

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