Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP4712207
Kind Code:
B2
Abstract:
A substrate is provided having first and second formation areas. An oxide film is formed on both formation areas. An oxidation resistance film is then formed on the oxide film. The second formation area is masked by disposing a photoresist on the oxidation resistance film above the second formation area. The oxidation resistant film is removed from the first formation area and then the photoresist above the second formation area is removed. The oxide film above the first formation area is removed while using the oxidation resistant film above the second formation area as a mask. A first oxide film is formed on the first formation area followed by the removal of the oxidation resistance film above the second formation area. Subsequently, a second oxide film is formed on the second formation area. The first oxide film is designed to have thickness different from the second oxide film.
Inventors:
Taniguchi Toshimitsu
Shigeyuki Furuya
Shigeyuki Furuya
Application Number:
JP2001076117A
Publication Date:
June 29, 2011
Filing Date:
March 16, 2001
Export Citation:
Assignee:
Sanyo Electric Co., Ltd.
International Classes:
H01L27/088; H01L29/78; H01L21/32; H01L21/8234
Domestic Patent References:
| JP3116968A | ||||
| JP2271659A | ||||
| JP2002246464A | ||||
| JP8130250A | ||||
| JP7202175A | ||||
| JP2000068499A | ||||
| JP2001044293A |
Attorney, Agent or Firm:
Katsuhiko Sudo
Takashi Okada
Takashi Okada