Title:
半導体レーザ素子およびその製造方法
Document Type and Number:
Japanese Patent JP4712241
Kind Code:
B2
Inventors:
Nobuhiko Sawaki
Honda Yoshio
Norifumi Kameyo
Masashi Yamaguchi
Norikatsu Koide
Shigeru Ito
Tomoki Ohno
Furukawa Katsunori
Honda Yoshio
Norifumi Kameyo
Masashi Yamaguchi
Norikatsu Koide
Shigeru Ito
Tomoki Ohno
Furukawa Katsunori
Application Number:
JP2001240413A
Publication Date:
June 29, 2011
Filing Date:
August 08, 2001
Export Citation:
Assignee:
Nobuhiko Sawaki
Sharp Corporation
Sharp Corporation
International Classes:
H01S5/343; H01S5/323
Domestic Patent References:
| JP11112029A | ||||
| JP9199419A | ||||
| JP10107375A | ||||
| JP2002026387A | ||||
| JP2000349338A |
Other References:
Journal of Crystal Growth, Vol.230 (2001), pp.346-350
Attorney, Agent or Firm:
Kuro Fukami