Title:
半導体部品及びその製造方法
Document Type and Number:
Japanese Patent JP4718187
Kind Code:
B2
Abstract:
Disclosed is a method for the production of a semiconductor component provided with at least one first vertical power component (5,9) and at least one lateral, active component (6) and/or at least one second vertical power component (10) between which is placed at least one trench (2) filled with an insulation (4). Also disclosed is a semiconductor component produced with the method. The semiconductor component is distinguished by an eccentric or concentric arrangement of the respective functional components (5,6,9,10) which are separated from each other by a trench insulation. To produce such a semiconductor component, at least one trench (2), which completely encompasses at least one part area of the front side and then is filled with an insulation (4) is etched into a silicon substrate (1). In the further course of the method, the entire area of the silicon substrate (1) is thinned (1) from said back side to said insulation (4), i.e. to the bottom side of the insulation. Contacting of the power components (5,9,10) occurs from the back side.
Inventors:
Coleman-Von Platen, Klaus
Bernd, Helmut
Friedrich, Detlef
Bernd, Helmut
Friedrich, Detlef
Application Number:
JP2004565915A
Publication Date:
July 06, 2011
Filing Date:
December 23, 2003
Export Citation:
Assignee:
FRAUNHOFER-GESELLSCHAFT ZUR FORDERUNG DER ANGEWANDTEN FORSCHUNG E. V.
International Classes:
H01L21/76; H01L21/331; H01L21/762; H01L27/04; H01L27/088; H01L29/739; H01L29/78
Domestic Patent References:
| JP2001127149A |
Attorney, Agent or Firm:
Yasunori Otsuka
Shiro Takayanagi
Yasuhiro Otsuka
Shuji Kimura
Hidekazu Matsumaru
Osamu Shimoyama
Shiro Takayanagi
Yasuhiro Otsuka
Shuji Kimura
Hidekazu Matsumaru
Osamu Shimoyama