Title:
薄膜トランジスタの製造方法
Document Type and Number:
Japanese Patent JP4722391
Kind Code:
B2
Inventors:
Tatsuya Arao
Higaki Kinsei
Kitakaku Hideto
Takuya Matsuo
Higaki Kinsei
Kitakaku Hideto
Takuya Matsuo
Application Number:
JP2003405620A
Publication Date:
July 13, 2011
Filing Date:
December 04, 2003
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
Sharp Corporation
Sharp Corporation
International Classes:
H01L21/20; H01L21/336; H01L21/265; H01L21/322; H01L29/786
Domestic Patent References:
| JP11008393A | ||||
| JP2000252474A | ||||
| JP2002190597A | ||||
| JP2002164546A | ||||
| JP2003243417A |
Attorney, Agent or Firm:
Yoichi Oshima