To provide a field effect transistor which can be manufactured simply and inexpensively, obtain a large on/off ratio by attaining improvement of on-current and reduction of off-current at the same time, and to provide its manufacturing method and image display.
The field effect transistor is composed of at least a semiconductor layer 106, a first gate electrode 108 formed via a first insulating film 107 on the side of one surface of the semiconductor layer 106, and source-drain electrodes 104 and 105. The semiconductor layer 106 is located between the source-drain electrodes 104 and 105, and has a region in thinner film thickness than that of the other region in at least a partial region facing the first gate electrode 108.
COPYRIGHT: (C)2004,JPO
Mori Shigeyasu
Akihito Yoshida
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